Selective p- and n-doping of Colloidal PbSe Nanowires to Construct Optoelectronic Devices Selective p- and n-doping of Colloidal PbSe Nanowires to Construct Optoelectronic Devices - We report the controlled and selective doping of colloidal PbSe nanowire arrays to define pn junctions for electronic and optoelectronic applications. The nanowires are remotely doped through their surface, p-type by exposure to oxygen and n-type by introducing a stoichiometric imbalance in favor of excess lead.
Article DOI: 10.1021/acsnano.5b02734
Contributed by: Glenn Banks
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