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Self-Correcting Process for High Quality Patterning by Atomic Layer Deposition

Self-Correcting Process for High Quality Patterning by Atomic Layer Deposition - Nanoscale patterning of materials is widely used in a variety of device applications. Area selective atomic layer deposition (ALD) has shown promise for deposition of patterned structures with sub-nanometer thickness control. However, the current process is limited in its ability to achieve good selectivity for thicker films formed at higher number of ALD cycles.


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Article DOI: 10.1021/acsnano.5b03125
Contributed by: Glenn Banks



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